B, October 2003©2003 Fairchild Semiconductor CorporationElectrical CharacteristicsTC = 25°C unless otherwise notedNotes:1. Repetitive Rating: Pulse width limited by maximum junction temperature2. L = 14.2mH, IAS = 9.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C3. ISD ≤ 9.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C4. Pulse Test: Pulse width≤ 300µs, Duty cycle. The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET, 10N60 datasheet, 10N60 circuit, 10N60 data sheet: UTC, alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Royal defense pc game free download.
10N60 Datasheet PDF - Unisonic Technologies
10n60 Mosfet Datasheet Pdf
| Part Number | 10N60 | |
| Description | 600/650 Volts N-CHANNEL POWER MOSFET | |
| Manufacturers | Unisonic Technologies | |
| Logo | ||
There is a preview and 10N60 download ( pdf file ) link at the bottom of this page. Total ( 9 pages ) | ||
10N60 MOSFET Datasheet Pdf - Equivalent. Cross Reference ..
Preview 1 page No Preview Available ! www.DataSheet4U.com 10 Amps, 600/650 Volts Power MOSFET The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. * 10A, 600V, RDS(ON) =0.73Ω@VGS =10V * Low Crss ( typical 18 pF) * 100% avalanche tested SYMBOL *Pb-free plating product number: 10N60L 3.Source Ordering Number Lead Free Plating 10N60L-x-TA3-T TO-220 123 Packing www.unisonic.com.tw 1 of 7 |
www.DataSheet4U.com Power MOSFET Fig. 2B Switching Waveforms Fig. 3B Gate Charge Waveform RD L BVDSS VDD VDD tp Time Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms www.unisonic.com.tw QW-R502-119.A Preview 5 Page |
| Information | Total 9 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Product Image and Detail view | 1. - 600V, 10A, N-ch MOSFET [ Learn More ] | |
| Download | [ 10N60.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | Manufacturers |
| 10N60 | The function is N-Channel Power MOSFET. | nELL |
| 10N60 | The function is N-Channel Mosfet Transistor. | Inchange Semiconductor |
| 10N60 | The function is 600/650 Volts N-CHANNEL POWER MOSFET. | Unisonic Technologies |
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10N60 Datasheet PDF - CHONGQING PINGYANG
| Part Number | 10N60 | |
| Description | N-CHANNEL MOSFET | |
| Manufacturers | CHONGQING PINGYANG | |
| Logo | ||
There is a preview and 10N60 download ( pdf file ) link at the bottom of this page. Total ( 2 pages ) | ||
Preview 1 page King george vi post box. No Preview Available ! 10A mps,600 Volts N-CHANNEL MOSFET 10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A Low Ciss 100% avalanche tested TO-220AB ITO-220AB TO-263 TO-262 Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Symbol Gate-Source Voltage Pulsed Drain Current(Note1) Avalanche Current(Note1) Reverse Diode dV/dt (Note 3) Maximum lead temperature for soldering purposes, VDSS ID EAS EAR TJ,TSTG Mounting Torque 10N60 ±30 40 10 5.5 260 1.1 V mJ mJ ℃ lbf·in Thermal Characteristics Maximum Junction-to-Case TC=25℃ RthJC ITO-220 125 TO-220 155 TO-263 155 ℃/W Rev. 14-1 |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Product Image and Detail view | 1. - 600V, 10A, N-ch MOSFET [ Learn More ] | |
| Download | [ 10N60.PDF Datasheet ] | |
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Mosfet 10n60e
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10N60 MOSFET Datasheet Pdf - Equivalent. Cross Reference Search
Featured Datasheets
UNISONIC TECHNOLOGIES CO., LTD
| Part Number | Description | Manufacturers |
| 10N60 | The function is N-Channel Power MOSFET. | nELL |
| 10N60 | The function is N-Channel Mosfet Transistor. | Inchange Semiconductor |
| 10N60 | The function is 600/650 Volts N-CHANNEL POWER MOSFET. | Unisonic Technologies |
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